Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction Síntesis y caracterización de interfase de heterojuntura In(O;OH)S/AgInS2
نویسندگان
چکیده
In this work, we presented some complementary studies for In(O,OH)S thin films deposited on AgInS2 thin films to fabricate a new system absorbent-layer/ buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition. X-ray diffraction measurements indicated that AgInS2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure. The AgInS2 thin films presented p-type conductivity, and from transductance measurements it was found a high absorption coefficient (greater than 104 cm−1) and an energy band gap of 1.95 eV; and In(O,OH)S thin films presented Eg about 3.01 eV; morphological analysis indicated that under this synthesis conditions, In(O,OH) S thin films coated completely the AgInS2 absorber
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